* Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A
* Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A
* Advanced Package and Silicon combination for low rDS(on) a.

* Primary DC-DC MOSFET
* Secondary Synchronous Rectifier
* Load Switch Top Pin 1 Bottom S Pin 1 S S G S S.

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications
* Primary DC-DC MO.

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